METHOD FOR MANUFACTURING DUAL GATE OXIDE LAYER OF DIFFERENT THICKNESS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a dual gate oxide layer of different thickness of a semiconductor device is provided to prevent the first gate oxide layer from being weakened in a subsequent process, by inducing a passivation layer on the firstly-induced first gate oxide layer to form the dual gate oxide layer. CONSTITUTION: The first gate oxide layer(200) is formed on a semiconductor substrate(100). A passivation layer(300) is formed on the first gate oxide layer. A photoresist pattern is formed on the passivation layer. A part of the passivation layer and the first gate oxide layer is selectively etched to expose the surface of the semiconductor substrate by using the photoresist pattern as an etching mask. The remaining first gate oxide layer is protected by the remaining passivation layer, and the photoresist pattern is eliminated. The second gate oxide layer having a thickness different than that of the first gate oxide layer is formed on the exposed semiconductor substrate.