| 摘要 |
PURPOSE: A mask pattern with an antistatic structure is to prevent damage of a mask pattern due to static electricity which is generated at closely separated portions of a floating mask in a patterning process utilizing the floating mask. CONSTITUTION: The mask pattern is positioned to be spaced apart form an upper portion of a photoresist and is used for forming the photoresist with a prescribed pattern by exposure and developing processes. The mask pattern comprises the first and the second mask pattern portions and a connection line(103). The second mask pattern portion is spaced apart from the first mask pattern portion. The connection line connects the first mask pattern portion with the second one, and has a line width not to be patterned by the exposure process. The line width is 3 micrometers or less.
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