| 摘要 |
PURPOSE: A method for preventing particles from being generated in a chamber is provided to prevent yield from being decreased by the particles and to extend the lifetime of parts of the chamber, by controlling initial particles after wet-etching the chamber to reduce the level of generation of the particles, and by extending the period of a wet-etching process. CONSTITUTION: A plasma chamber includes a chamber wall(21), a wafer chuck(22), an upper electrode(24) and a lower electrode(26). An etch stop layer is formed on the surface of the inside of the etch chamber by using plasma(28). A bare wafer(27) applied with photoresist is settled in a wafer chuck. The plasma which reacts with the photoresist to form an organic compound is generated in the chamber.
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