发明名称 |
METHOD FOR CONNECTING CELL ARRAY WITH SEGMENT TRANSISTOR IN FLASH CELL ARRAY |
摘要 |
PURPOSE: A method for connecting a cell array with a segment transistor is to prevent a junction failure and an arrangement difference induction of cells arranged right and left in the center of segment. CONSTITUTION: The first oxide layer(32) is formed on a semiconductor substrate(31). A plurality of segment diffusion lines(34) is formed on a segment region of the substrate at a predetermined interval. A buried oxide layer is formed on the surface of the segment diffusion line. The first polysilicon layer(36) is formed on the segment region of the substrate. A cell diffusion line(37) is formed in the substrate on both sides of the first polysilicon layer. The second oxide layer(38) is formed on the substrate above the cell diffusion line so that a predetermined part thereof is overlapped with the first polysilicon layer. The second polysilicon layer is formed so that a predetermined part thereof is overlapped with the second oxide layer. A word line(41) is formed on the second oxide layer. The first and second polysilicon layers are selectively removed by using the second oxide layer as a mask. A cap insulating layer(42) is formed on the removed part. A gate electrode(46a) is formed on the cap insulating layer.
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申请公布号 |
KR20010038086(A) |
申请公布日期 |
2001.05.15 |
申请号 |
KR19990045905 |
申请日期 |
1999.10.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, UK HYEON |
分类号 |
H01L27/115;(IPC1-7):H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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