METHOD OF MEASURING JUNCTION TEMPERATURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of measuring junction temperature of a semiconductor device is to measure the junction temperature in various operating modes and a high speed operation of an input/output drive circuit of a semiconductor device using a diode property. CONSTITUTION: A portion having a current-voltage property of a diode(51) is limited at an inner portion of a semiconductor device. A temperature variation index K is measured in the limited portion according to a voltage change. A desired intensity of measuring current(52) is applied to the limited portion to measure an initial voltage and a last voltage. Junction temperature is measured using the measured value. A full-down transistor having ESD(electro static discharge) structure is used as a portion having a diode property. The initial voltage is indicated by the measuring current applied before the full-down transistor is operated in an active state. The last voltage is indicated by the measuring current applied after the full-down transistor is changed from the active state to a saturated state. A temperature changing value is calculated by multiplying the temperature changing index and a difference value between the initial voltage and the last voltage.