METHOD FOR FORMING LOWER ELECTRODE OF CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a lower electrode of a capacitor is to prevent hillock by forming a planarized barrier film on a sacrificial oxide film. CONSTITUTION: The first insulating film(280) having a contact plug(400) is formed on a semiconductor substrate. The second insulating film(320) is formed on the first insulating film, with a capacitor of the second insulating film having a minimum height of a lower electrode. The third insulating film(360) is formed on the second insulating film as a barrier film to a planarized film. The third and second insulating film are etched to form an opening(460) exposing the contact plug. The second insulating film is selectively removed to enlarge the opening. A conductive film for a lower electrode is formed on the third insulating film, and the fourth insulating film(380) is formed on the conductive film. After the fourth insulating film is planarized till an upper portion of the third insulating film is exposed, the third and the fourth insulating film are removed.