| 摘要 |
PURPOSE: A method of fabricating a semiconductor device is to prevent a step difference from being formed at an insulating film even when the insulating film is deposited on a portion in which a step difference is generated. CONSTITUTION: An oxide film(5) is formed on the substrate along a step difference formed on the upper face of the substrate. A polycrystalline silicon sidewall(6) is formed at a sidewall of a portion in which the step difference of the oxide film is high. An etching process is performed using the polycrystalline silicon sidewall as a mask to remove the oxide film. Therefore, the polycrystalline silicon and the oxide film are stacked on the relative low region to form a pattern of which a sectional view is pillar type. An insulating film(7) is deposited on an upper portion of the structure. A contact hole is formed at the insulating film and connected to a desired region of the semiconductor device.
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