METHOD FOR FABRICATING DIAMOND VACUUM DEVICE

摘要

PURPOSE: A method for fabricating a diamond vacuum device is provided to improve efficiency of a vacuum device by using a diamond layer as a field emission layer. CONSTITUTION: A silicon oxide layer(11A) is formed on a silicon substrate. A polysilicon wiring layer is deposited thereon. A diamond layer is deposited selectively on an upper portion of the silicon wiring layer. A diamond cathode(13) is formed by removing the diamond layer from the upper portion of the silicon wiring layer. A metal such as titanium or tungsten is deposited thereon. A gate(15) and an anode(14) are formed by performing a mask process. The silicon oxide layer(11A) is etched by using a photoresist layer as a mask. The photoresist layer is removed. A photoresist layer is filled into the diamond cathode(13), the silicon wiring layer, the gate(15), and the anode(14). A silicon oxide layer(17) is deposited on the whole surface of the above structure. An exhaust hole is formed by etching the silicon oxide layer(17).