| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material excellent in resolving power and focusing allowance low in fluctuation of line width and deterioration of the shape even during PED for a long time, causing little foreign matter after being applied, developed or peeled off, giving an excellent pattern profile shape after being developed, having high resolving power suitable for micro fabrication and exhibiting great power particularly in far ultraviolet ray lithography by incorporating a sulfonate group in the molecule. SOLUTION: This resist material contains the sulfonyldiazomethane compound shown by general formula 1 as an acid-forming agent by light. In general formula 1, R1 and R3 are each a 1-10C alkyl or 6-14C (substituted) aryl group; R2 is a 1-6C alkyl group; G is SO2 or CO; p is an integer of 0-4; p is an integer of 1-5 and 1<=p+q<=5; n is 1 or 2; m is 0 or 1 and n+m=2. |
