| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method for TFT by utilizing a single lithography step to suppress the time and cost for manufacturing a self-matching device to minimum. SOLUTION: A semi-transparent gate electrode 10 is formed on a substrate 12, over which a first dielectrics layer 14, semiconductor layer 16, and second dielectrics layer 19 are allowed to stick, and a photoresist is allowed to stick on it. The photoresist is exposed from the rear surface with the gate electrode 10 as a mask for patterning, which is used as a mask for etching the second dielectrics layer 19. Then the photoresist is removed and a doped semiconductor layer 24 and conductive layer 28 are allowed to stick on the semiconductor layer 16 and dielectrics layer 19, which are patterned to provide source electrode and drain electrode 42 and 44.</p> |
