| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an active matrix type display device of high reliability. SOLUTION: A silicon nitride film formed on a glass substrate, an active layer formed above the silicon nitride film, a gate electrode formed on the active layer through a gate insulating film, a source electrode connected to the active layer, a silicon nitride film formed on the source electrode, and a pixel electrode which is, formed on the silicon nitride film formed on the source electrode, connected to the active layer, are provided.</p> |
