| 摘要 |
PROBLEM TO BE SOLVED: To suppress a white spot from occurring when a dark signal is acquired with a photoelectric conversion element in an invalid imaging region by reducing the depletion region of the photoelectric conversion element in the invalid imaging region. SOLUTION: Related to a valid imaging region 100A, an N- type impurity region 132 is formed on a P- type well layer 130 provided at the deep layer of an N- type Si substrate 110, over which an N- type photoelectric conversion region 134 and a P+ type impurity region 136 which constitute a photodiode 112 are formed. The N- type impurity region 132 deepens the overflow barrier of the valid imaging region 100A, for improved sensitivity in a near infrared region. Related to an invalid imaging region 100B, the N- type photoelectric conversion region 134 and the P+ type impurity region 136 which constitute the photodiode 112 are formed, with no N- type impurity region 132 formed on the P- type well layer 130. Thus, the depletion region of the invalid imaging region 100B is reduced, and a white spot at dark signal is suppressed to accurately decide a black level.
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