| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with superior high-frequency characteristics without maximizing a package size, and a method for manufacturing the semiconductor device. SOLUTION: Metal covering is made on the substrate side of a chip 2, and a bonding pad 3a being electrically connected to a metal covering surface 4 is arranged on the chip 2, thus obtaining a bonding position on the chip 2 without distinguishing a bonding wire 10 for grounding from a bonding wire 10' for propagating a high-frequency signal, and suppressing the fluctuation of the bonding position as in the case where a grounding bonding region is obtained on the bottom surface of a package. |
