| 摘要 |
PROBLEM TO BE SOLVED: To selectively form a semiconductor thin film, which hardly makes facets on a semiconductor layer, improve stability of a growth apparatus and facilitate its maintenance. SOLUTION: Two steps are alternately repeated: one step of having a semiconductor substrate having openings of a heated insulation film irradiated with a saw material gas of a semiconductor and a doping gas for a time tg, to selectively grow a semiconductor layer and the other step of having it irradiated with hydrogen gas for a time te, after stopping both the raw material gas and the doping gas from irradiating. Thus a semiconductor thin film can be formed selectively on the semiconductor layer through the openings of the insulation film with suppressing facets from growing, and since neither chlorine gas nor hydrogen chloride gas is used as the etching gas, the piping and the like of the growing apparatus will corrode and stability and maintainability are improved.
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