| 摘要 |
PROBLEM TO BE SOLVED: To obtain a crystalline semiconductor film having a wide area, such that when an energy is applied to crystallize a nonsingle-crystal semiconductor film, such as amorphous or polycrystalline films formed on a nonsingle-crystal insulation film or nonsingle-crystal insulation substrate, the irregular nucleus growth is suppressed, crystal grains having an orientation easy to grow the crystal are controlled, so as to make the crystal orientation approximately uniform. SOLUTION: An amorphous Si film 2, having an edge-like neck 3 smooth at the outlet side in the crystal growing direction, is formed on a glass substrate 1 and crystal grown to the outlet side having a smooth shape from the inlet of the neck 3. Among many crystal nuclei generated at the neck 3, crystals having an orientation which tends to make the crystal grow are selected at the neck 3, and irregular crystal nuclei are suppressed from growing in the desired region, away from the neck 3 for growing the crystal grains to a large size by making the outlet smooth in edge.
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