| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with no such voltage oscillation as that causing the malfunction of a peripheral device. SOLUTION: Related to a semiconductor device with a pin structure, the impurity concentration gradient of an n+ buffer layer 103 is configured to 2×1018 cm-4 or below. So, an inversion bias voltage is applied, and even if a depletion layer reaches the n+ layer 103, the abrupt enlargement-stop with the depletion layer is suppressed, resulting in suppressed voltage oscillation.
|
