发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent the connection failure between a front surface main electrode on the surface of a semiconductor substrate and a connection electrode being connected to the surface main electrode, and the characteristic failure of a semiconductor chip caused by the scattering of a conductive adhesive paste agent. SOLUTION: The semiconductor device is equipped with a front surface main electrode 43 on the front surface of a semiconductor substrate 40, a back surface main electrode 44 on the back surface of the semiconductor substrate 40, a first lead 21 being connected to the back surface main electrode 44, a second lead 22 being arranged around the first lead 21, a connection electrode 6 being connected to the front surface main electrode 43 in an opening 45H of an adhesive adhesion prevention film 45, an interlock lead 5 where one end is connected to the connection electrode 6 and the other is connected to the second inner lead 22, and conductive bonding paste agents 71 to 73 for bonding between the front surface main electrode 43 and the connection electrode 6, between the back surface main electrode 44 and a first inner lead 21c, and between the connection lead 5 and a second inner lead 22C.
申请公布号 JP2001127100(A) 申请公布日期 2001.05.11
申请号 JP19990304239 申请日期 1999.10.26
申请人 SANKEN ELECTRIC CO LTD 发明人 MURAMATSU SHINJI
分类号 H01L21/60;H01L23/48;H01L23/50 主分类号 H01L21/60
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