| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide polishing fluid for metal and a method for polishing a substrate using the polishing fluid for discovering a high CMP rate, and for realizing high flattening, dishing amount reduction, and erosion amount reduction, and for executing high reliable metallic film embedding pattern formation. SOLUTION: This is polishing fluid for metal containing hydrogen peroxide, malic acid, benzotriasol, ammonium polyacrylate, and water. This is a polishing method for supplying the polishing fluid for metal to a polishing pad on a polishing platen, and for polishing a face to be ground by bringing the polishing pad into contact with the face to be ground, and relatively moving them. Also, this is a method for polishing a substrate by using the polishing fluid for metal.</p> |
