| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high reliability and a high yield, and a wiring structure which is hard to short-circuit. SOLUTION: In a semiconductor device which is provided, on one main face of a silicon substrate, with a metal wiring containing aluminum as a main structure material, and copper as a dopant, an element restricting deposition of copper is included in the metal wiring layer, or a neighboring film restricting deposition of copper is brought into contact with the metal wiring layer. |
