| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid carrier multiplying stage which further prevents a dark current noise, together with its method as well as a sensor which incorporated the multiplying state. SOLUTION: Related to an electric charge amplifying device with which a channel existing the whole range and in a depleted semiconductor volume (for example, charge accumulated area of optical sensor) passing a high electric- field area causes a single stage of impact ionization with no avalanche, the high electric-field area is separated from the region of moving carrier to minimize occurrence of the dark current noise. A sensor incorporating it is provided as well. Related to a method for multiplying the electric charge of a storage well, a multiplication well is provided below an electric charge multiplication gate electrode to receive a high electric field, while the electric charge is transferred from the storage well to the multiplication well for generating additional electric charge by a single stage of impact ionization. Here, the additional electric charge is added to an initial electric charge to form a multiplication electric charge.
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