| 发明名称 |
DISPOSITIF SEMI-CONDUCTEUR OU CIRCUIT INTEGRE MONOLITHE AVEC INTERCONNEXIONS EN TUNGSTENE |
| 摘要 |
The tungsten interconnections are coated with platinum where leads are to be attached. The device or circuit is sealed with a layer of silicon nitride or other protective insulating material which has no openings at or near the P-N junctions which extend to the surface of the semiconductor chip. |
| 申请公布号 |
BE786665(A1) |
申请公布日期 |
1972.11.16 |
| 申请号 |
BE19720786665 |
申请日期 |
1972.07.24 |
| 申请人 |
RCA CORP., 30 ROCKEFELLER PLAZA, NEW YORK, NEW YORK 10020, (E.U.A.), |
发明人 |
J.M. SHAW. |
| 分类号 |
H01L21/00;H01L23/31;H01L23/522;(IPC1-7):H01L/ |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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