| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein, at post-oxidation for improved characteristics and reliability, a metal layer constituting a gate electrode is prevented from being oxidized while the fluctuation in threshold voltage is suppressed. SOLUTION: The method for manufacturing a p-channel type semiconductor device comprises a process A where a gate insulating film 22 is formed on the surface of a semiconductor layer 20, a process B where a gate electrode 23 is formed where a metal layer 23C and a silicon layer 23A comprising p-type impurity are laminated, a process C where an oxidizing gas permeable layer 25 is so formed on the semiconductor layer 20 as to cover the side surface of silicon layer 23A while allows the metal layer 23C to protrude, a process D where an oxidation-resistant layer 27 covers the top surface and side surface of the metal layer 23C which protrudes above the oxidizing gas permeable layer 25, a process E where the oxidizing gas permeable layer 25 is selectively removed and is left out on the side surface of silicon layer 23A, and a process F where an oxide film 23D is formed on the side surface of silicon layer 23A by a thermal process in an oxidizing atmosphere.
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