VARIABLE CAPACITANCE ELEMENT AND INTEGRATED CIRCUIT CONTAINING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit containing a variable capacitance element which has a big capacitance changing ratio corresponding to a voltage change. SOLUTION: An n-type well layer 103 is formed on the upper layer of a p-type silicon substrate 104, a gate oxide film layer 102 is formed on the well layer 103, a gate electrode layer 101 is formed on the upper layer of the gate oxide film layer 102 and the silicon substrate 104 is connected with the ground. A capacitance between the gate electrode layer 101 and the well layer 103 is made to change by varying a voltage between the gate electrode layer 101 and the well layer 103.