| 摘要 |
PROBLEM TO BE SOLVED: To form a high-quality insulation film for flattening the unevenness of an upper face of a multilayer LSI chip by a plasma CVD method. SOLUTION: An insulation film 30-l is formed by an anisotropic plasma CVD method on an upper face of an LSI chip 3 having recessed parts 21, 22 of different widths. By an isotropic plasma etching method, the insulation film 30-1 is turned into a film 30-2 having recessed parts with a gentle surface. Then, another insulation film 30-3 is formed by an anisotropic plasma CVD method and is subjected to isotropic plasma etching to obtain an insulation film 30-4 with a gentle surface. By repeating these processes, a flat insulation film 30-5 can be obtained.
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