发明名称 NON-VOLATILE FERROELECTRIC MEMORY DEVICE PROVIDED WITH REDUNDANT CIRCUIT, AND DEFECTIVE ADDRESS SUBSTITUTING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a redundant circuit being suitable for improving relieving efficiency and arranging efficiently a relieving circuit when a defect occurs in a row line of a main cell region. SOLUTION: When an error occurs in row address selecting operation of a main cell region having first and second local word line driver sections having first and second cell array sections, arranged between them, and outputting signals for driving cells of first and second cell arrays, the device is constituted of redundant first and second cell array sections, and redundant first and second local word line driver sections so that basic constitution of a redundant cell region for substituting this circuit is made same as basic constitution of the main cell region, when a defect occurs, a non-activation signal is outputted to a main word line driver, a control signal is outputted to the redundant first and second local word line driver sections from a redundant drive circuit section, and a drive signal is applied to the first and the second local word line driver from a local X decoder section.
申请公布号 JP2001126493(A) 申请公布日期 2001.05.11
申请号 JP20000282492 申请日期 2000.09.18
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 KYO KIFUKU
分类号 G11C14/00;G11C11/22;G11C11/401;G11C11/407;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C14/00
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