| 摘要 |
<p>PROBLEM TO BE SOLVED: To expose a gate, drain, and auxiliary capacity terminal part provided on a thin-film transistor array substrate, with no degradation in productivity. SOLUTION: A process where a gate electrode 1, a gate bus line 2, a gate line terminal 3, an auxiliary capacity bus line 4, and an auxiliary capacity terminal 5 are formed on a glass substrate 18, and a process where a multi-layer gate insulating film (silicon oxide film 14, silicon nitride film 15) is formed, are provided before formation of a functional element. After that, a protective film 13 is formed over the entire surface of the substrate 18, and by etching twice, dry-etching and wet-etching with BHF, with the same resist pattern when opening a hole on the gate terminal 3, a drain line terminal 9, and the protective film on the auxiliary capacity terminal 5, a terminal part metal at a different layer is exposed. Then, a pixel electrode 11 and a terminal part transparent electrode 12 are formed to complete a thin-film transistor array substrate.</p> |
