| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystal silicon film of high mobility and a manufacturing method for it. SOLUTION: An amorphous silicon film 52 is deposited on an insulating substrate 51 which is worked into a band by etching with a resist pattern 1. The amorphous silicon film 52 is poly-crystallized by a melting re-crystallization to form a band-like polycrystal silicon film 2, and an amorphous silicon film 3 is deposited on the insulating substrate 51 and the polycrystal silicon film 2. The amorphous silicon film 3 is polycrystallized by a solid-phase growth method to provide a polycrystal silicon film 4. Here, the crystal particles occurred in the amorphous silicon film 3 are crystal-grown in an arrow A direction with the crystal particles in the two band-like polycrystal silicon films 2 as seed crystal. So, the crystal particles in the polycrystal silicon film 4 are long in the horizontal direction relative to insulating substrate 51, and the grain boundary of the polycrystal silicon film 4 is formed in an intermediate position M between two band-like polycrystal silicon films 2.
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