| 摘要 |
PROBLEM TO BE SOLVED: To prevent degradation of reliability as much as possible. SOLUTION: A semiconductor device is provided with a semiconductor substrate 2 comprising an element formation region and an element separation region, a transistor comprising gate electrodes 5, 6, 7, and 8 formed in the element region of the semiconductor substrate as well as a diffusion layer 9 formed in the element regions on both sides of the gate electrode, and a barrier insulating film 12 formed above the substrate except for the region near the gate electrode of the transistor.
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