| 摘要 |
PROBLEM TO BE SOLVED: To obtain a capacitor whose power loss is small without requiring a large area. SOLUTION: A capacitor of a small parasitic resistance and a small area can be obtained by applying a metal wiring for a wiring of a line-and-space structure and by utilizing a capacity generated between the adjacent metal wirings. A wiring 3 consists of a metal such as Al and Cu and extends in x- direction, and a plurality of wirings 3 are arranged at predetermined intervals in y-direction, thereby composing a line-and-space structure. The line-and-space structure is formed on a silicon substrate 1. On the substrate 1, an insulating film 2 consisting of a silicon oxide film or the like is also formed and the adjacent wirings 3 are isolated electrically by the insulating film 2. |
