| 摘要 |
PROBLEM TO BE SOLVED: To easily provide MTCMOS circuit technology and to reduce power and noise. SOLUTION: In a semiconductor device having a semiconductor layer on a substrate 1 through an insulating layer 2 and having a circuit constituted of field effect transistor in the semiconductor layer, the circuit is constituted of plural blocks and an electrode 3 is installed below desired one or two or above blocks among plural blocks through the insulating layer 2, or the electrode is installed below one conductive field effect transistor in one or two or above blocks among plural blocks through the insulating layer.
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