METHOD FOR MANUFACTURING FERROELECTRICS THIN FILM, FERROELECTRICS CAPACITOR, FERROELECTRICS MEMORY CELL AND MANUFACTURING METHOD FOR FERROELECTRICS MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a laminar ferroelectrics thin film of non-c-axis orientation. SOLUTION: The manufacturing method for a ferroelectrics thin film comprises a process where a ferroelectrics thin film 13 having a laminar structure of random orientation is formed on the surface of a conductive layer 12 where at least a surface comprises a globular crystal structure. The ferroelectrics thin film is formed by providing, on its surface, a precursor solution containing an organic metal compound which comprises a small amount of at least one element among Mn, La, Ce, and Dy before sintered at 700 deg.C or below. The thin film is formed on a lower part electrode having a globular crystal structure at its surface to form a ferroelectrics capacitor or ferroelectrics memory.