Semiconductor device comprises a region of a first conducting type formed on the surface of a semiconductor substrate, an element-forming region, a semiconductor element, an insulation film and a contact hole

摘要

The semiconductor element has an electrode part (4a), a pair of first impurity regions; and second impurity regions. Semiconductor device comprises a first region (2a) of a first conducting type formed on the surface of a semiconductor substrate; an element-forming region which is divided on the surface by an element insulation film (3) and is formed on the surface of the region of the first conducting type; a determined semiconductor element formed on the element-forming region; an insulation film (11) formed on the substrate to cover the semiconductor element; and a first contact hole (12c) in the insulation film to expose the surface of the element-forming region. Preferred Features: The insulation film is made of silicon oxide. The impurity is phosphorus or boron.