Electron beam photolithography device for IC manufacture uses block mask provided with matrix of rectangular aperture patterns and setting aperture pattern used for setting beam deflector

摘要

The electron beam photolithography device uses a block mask (21), inserted in the path of the electron beam, provided with a number of square or rectangular aperture patterns, arranged in a matrix, together with at least one setting aperture pattern, used for setting the main beam deflector (31) to provide a given electron beam intensity at each edge of the setting aperture pattern. Also included are Independent claims for the following; (a) a setting method for a photolithography device; (b) a block mask for use in a photolithography device