发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
摘要 A semiconductor device comprises a silicon substrate, a thermal insulator layer including silicon oxide, and a heat detector. The thermal insulator layer includes a hollow or a hole with a diameter greater than its opening. At least part of the hollow or hole is formed in the silicon oxide.
申请公布号 WO0133644(A1) 申请公布日期 2001.05.10
申请号 WO2000JP07657 申请日期 2000.10.31
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;KOMOBUCHI, HIROYOSHI;CHATANI, YOSHIKAZU;YAMADA, TAKAHIRO;NISHIO, RIEKO;UOZUMI, HIROAKI;MASUYAMA, MASAYUKI;YAMAGUCHI, TAKUMI 发明人 KOMOBUCHI, HIROYOSHI;CHATANI, YOSHIKAZU;YAMADA, TAKAHIRO;NISHIO, RIEKO;UOZUMI, HIROAKI;MASUYAMA, MASAYUKI;YAMAGUCHI, TAKUMI
分类号 G01J5/10;H01L23/34;(IPC1-7):H01L35/32 主分类号 G01J5/10
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