| 摘要 |
<p>An epitaxial growth device (10) comprises a chamber (12) for enclosing semiconductor wafers (100), and a gas supply (16) for supplying process gas to the chamber. The gas supply (16) includes a HCl supply line (32) for supplying the chamber with HCl gas as a cleaning gas, a SiH4 supply line (34) for supplying a SiH4 gas to the HCl supply line (32), a controller (36), and a heater (38). The controller (36) controls the flow rate of the HCl gas and the SiH4 gas to supply the SiH4 gas to the HCl supply line (32) before the HCl gas is supplied to the chamber (18) through the HCl supply line (32). The heater (38) heats the HCl supply line (32).</p> |
