| 摘要 |
<p>A combust or for combustion type exhaust gas treatment device capable of simultaneously decomposing, at a high decomposition ratio, exhaust gases from a semi-conductor manufacturing device, particularly, a deposit gas containing SiH4 and a halogen gas, capable of making it difficult for SiO2 powder to adhere or deposit thereon, capable of realizing a low NOx combustion, and also capable of assuring safety, wherein a flame holding chamber (15) is provided which is open toward a combustion chamber (11), surrounded by a peripheral wall (12), and closed by a plate body (14) on the side opposite to the combustion chamber, exhaust gases, combustion improver, and air are introduced into the flame holding chamber (15) and then mixed with each other, and the mixed gas is injected toward the combustion chamber (11) vertically relative to the plate body (14).</p> |
