Metallic intermediate connection used in the production of integrated circuits comprises a barrier layer formed on the insulating film, an adhesion layer containing zirconium and an intermediate connection material containing copper

摘要

Metallic intermediate connection (42) buried in an insulating film (12) comprises a barrier layer (34) formed on the insulating film, an adhesion layer (36) containing zirconium formed on the barrier layer and an intermediate connection material containing copper as the main component formed on the adhesion layer. Independent claim are also included for: (a) a semiconductor device comprising a base substrate (10), an insulating film formed on the substrate and having an opening (30, 32) and the above metallic intermediate connection formed in the opening; and (b) a process for the production of the device. The connection preferably further comprises islands made of copper-zirconium alloy formed between the adhesion layer and the barrier layer.