| 发明名称 |
Semiconductor device and method for forming the same |
| 摘要 |
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
|
| 申请公布号 |
US2001001073(A1) |
申请公布日期 |
2001.05.10 |
| 申请号 |
US20000750064 |
申请日期 |
2000.12.29 |
| 申请人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
| 分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/06;H01L27/092;H01L27/12;H01L29/04;H01L29/78;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/136 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
