发明名称 |
Wafer produced by method of quality control for chemical vapor deposition |
摘要 |
A residual gas analyzer can be used as a deposition rate monitor. A deposition rate monitor is based on the detection of growth precursors and reaction byproducts of the thin film growth in deposition equipment such as chemical vapor deposition (CVD) systems. The growth precursors and byproducts are identified and quantified by using a residual gas analyzer (RGA). The ion current from gas species associated with the growth rate is then empirically correlated with the thickness of the film. The specific chemical species detected by the RGA is unique to the material that is deposited and to the technique in which the material is deposited.
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申请公布号 |
US2001000865(A1) |
申请公布日期 |
2001.05.10 |
申请号 |
US20000732473 |
申请日期 |
2000.12.07 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
GAUGHEN KEVIN;CHEN CHING-WEI;LI MINXU |
分类号 |
C23C14/06;C23C16/52;(IPC1-7):H01L21/31;C23C14/00 |
主分类号 |
C23C14/06 |
代理机构 |
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