METHOD OF PRECOATING PLASMA ENHANCED CVD SYSTEM

摘要

PROBLEM TO BE SOLVED: To reduce the occurrence of foreign substance in a film deposition process in a plasma enhanced CVD system using microwave and radio frequency(RF) plasma and to attain a plasma enhanced CVD system having high working ratio. SOLUTION: After the completion of NF3 plasma cleaning, microwave is introduced into a reaction chamber 1 and RF is applied to an upper chamber 2 to precoat the internal wall surface of the reaction chamber 1 with an SiO2 film of desired thickness. Owing to the confinement of molecules adsorbed on the wall surface immediately after plasma cleaning and the smoothing of the wall surface, the increase of foreign substance due to peeled-off layer at film deposition and the occurrence of foreign substance by abnormal electric discharge at the internal wall surface of the reaction chamber 1 at film deposition can be prevented.