发明名称 |
Semiconductor-oxide-semiconductor capacitor formed in integrated circuit |
摘要 |
An integrated capacitor structure includes first and second, conductive semiconductor portions spaced apart from one another where the first and second semiconductor portion are both of a same conductivity type (both N or both P). The integrated capacitor structure may be formed using same processes as are used for fabricating gate insulator and gate electrode parts of neighboring MOS transistors in a same integrated circuit.
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申请公布号 |
US6228696(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19980187691 |
申请日期 |
1998.11.05 |
申请人 |
VANTIS CORPORATION |
发明人 |
NGUYEN BAI;SHARPE-GEISLER BRADLEY A. |
分类号 |
H01L27/06;H01L29/94;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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