| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a method of refining of a gallium, by which the impurities like lead etc. difficult to remove, can be removed without using the recrystalliz ing method and the gallium having >=99.9999% purity and usable as a semi-con ductor raw material is obtained at a low cost and with high productivity. SOLUTION: After adding zinc to the gallium, the impurities like lead etc. is made to an azeotropic mixture with zinc by heating and holding to 420-910 deg.C under argon or nitrogen atmosphere while stirring and mixing. Successively, the impurity and zinc are vaporized and removed by heating to 800-1,000 deg.C while sucking gas to the vacuum and lastly, the zinc crystal grain and oxide, and film left in the gallium are filtrated and separated.</p> |
