发明名称 |
MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
摘要 |
A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.
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申请公布号 |
US6228719(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990235067 |
申请日期 |
1999.01.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
FRISINA FERRUCCIO;FERLA GIUSEPPE;RINAUDO SALVATORE |
分类号 |
H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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