发明名称 |
Hybrid 5F2 cell layout for buried surface strap aligned to vertical transistor |
摘要 |
A method and structure for an integrated circuit chip which includes forming a storage capacitor in a vertical opening in a horizontal substrate, forming a conductive strap laterally extending from the vertical opening and forming a transistor having a channel region extending along a vertical surface, the vertical surface lying outside of and being laterally displaced from the vertical opening, the transistor being electrically connected to the storage capacitor by an outdiffusion of the conductive strap.
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申请公布号 |
US6229173(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990339271 |
申请日期 |
1999.06.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRUENING ULRIKE;RADENS CARL J. |
分类号 |
H01L27/108;H01L21/02;H01L21/336;H01L21/8234;H01L21/8242;H01L27/088;H01L29/78;(IPC1-7):H01L29/72 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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