| 摘要 |
The present invention is directed to a circuit for detecting the end of a burst count in a semiconductor memory device. The circuit is responsive to a plurality of burst counter output bits and a plurality of burst length selection bits. The circuit is comprised of an array of individual semiconductor devices responsive to the burst counter output bits and the burst length selection bits for producing a transition in an output signal when the burst counter output bits are at a logical combination determined by the burst length selection bits. A method for detecting the end of a burst count in a semiconductor memory device is also disclosed.
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