| 摘要 |
A method used in some step of processing for ashing a photoresist resin film of a semiconductor wafer is disclosed. Generally the present method will conclude the following steps. Firstly adjusting Etch-Module-Asher endpoint is carried out. Then placing the substrate coated with the resist film in a vacuum chamber will be achieved. The next step is that positing silicon wafer into asher through the vacuum chamber having a wafer holding-set plate, it is for closely receiving and orderly stepped ranking the wafer. Here, the silicon wafer is pushed to the chamber. Finally, the last process is that adjusting second Etch-Module-Asher Endpoint. Simultaneously ashing the resist film by an oxygen plasma is carried out while heating the substrate to remove the resist film, therefore photoresist is peeled up a first end of the silicon wafer and the silicon wafer is cleaned up and the other end of the silicon wafer.
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