发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A plurality of CVD silicon nitride film islands are formed on a lower electrode which is located over a semiconductor substrate. The plurality of CVD silicon nitride film islands are spaced apart from one another to define exposed regions of the lower electrode therebetween. The CVD silicon nitride film islands and the exposed regions of the lower electrode are then subjected to heat treatment in a nitride atmosphere to form thermal silicon nitride films in the exposed regions of the lower electrode. A capacitor insulating film is formed over the CVD silicon nitride film islands and the thermal silicon nitride films, and then an upper electrode is formed over the capacitor insulating film.
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申请公布号 |
US6228737(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990225350 |
申请日期 |
1999.01.05 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
INOUE NOBUHIKO |
分类号 |
H01L21/318;H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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