发明名称 |
Semiconductor device with an undulating base region and method therefor |
摘要 |
A transistor (30) uses a single continuous base region (40) with an undulating structure. The semiconductor device is an insulated gate field effect transistor having a semiconductor substrate with a plurality of doped base branches, which extend into the semiconductor substrate, form into a single base region for the entire transistor. Each of the plurality of base branches (82) is undulating and of substantially constant width, and each of the base branches undulates in-phase with the immediately adjacent base branches. A continuous gate layer (34) overlies the semiconductor substrate and is self-aligned to the plurality of base branches. The undulating structure of the base region improves channel density, and thus lowers on-resistance, and the use of a single base region ensures that all portions of the base region throughout the device will be at a substantially constant electric potential. |
申请公布号 |
AU1211701(A) |
申请公布日期 |
2001.05.08 |
申请号 |
AU20010012117 |
申请日期 |
2000.10.18 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
PRASAD VENKATRAMAN;ALI SALIH |
分类号 |
H01L29/06;H01L29/423;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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