发明名称 |
Methods for forming contact holes having sidewalls with smooth profiles |
摘要 |
A method for forming an electronic device includes the steps of forming a first insulating layer on a substrate, forming a patterned conductive layer on the first insulating layer, and forming a second insulating layer on the first insulating layer and on the patterned conductive layer. A contact hole is formed through the first and second insulating layers exposing a portion of the substrate and a portion of the patterned conductive layer so that sidewalls of the contact hole including the exposed portion of the patterned conductive layer have a smooth profile through the first and second insulating layers. An insulating spacer is then formed on the contact hole sidewalls having the smooth profile.
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申请公布号 |
US6228762(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990231339 |
申请日期 |
1999.01.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-WOO |
分类号 |
H01L23/522;H01L21/311;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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