发明名称 Methods for forming contact holes having sidewalls with smooth profiles
摘要 A method for forming an electronic device includes the steps of forming a first insulating layer on a substrate, forming a patterned conductive layer on the first insulating layer, and forming a second insulating layer on the first insulating layer and on the patterned conductive layer. A contact hole is formed through the first and second insulating layers exposing a portion of the substrate and a portion of the patterned conductive layer so that sidewalls of the contact hole including the exposed portion of the patterned conductive layer have a smooth profile through the first and second insulating layers. An insulating spacer is then formed on the contact hole sidewalls having the smooth profile.
申请公布号 US6228762(B1) 申请公布日期 2001.05.08
申请号 US19990231339 申请日期 1999.01.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK YOUNG-WOO
分类号 H01L23/522;H01L21/311;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476 主分类号 H01L23/522
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