发明名称 Plasma density and etch rate enhancing semiconductor processing chamber
摘要 A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.
申请公布号 US6228208(B1) 申请公布日期 2001.05.08
申请号 US19980133279 申请日期 1998.08.12
申请人 APPLIED MATERIALS, INC. 发明人 LILL THORSTEN;OUYE ALAN
分类号 H01J37/32;(IPC1-7):C23F1/02 主分类号 H01J37/32
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